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30 July 2002 Spectral metrologies for ultra-line-narrowed F2 laser
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Abstract
The roadmap of semiconductor fabrication predicts that the semiconductor market will demand 65 nm node devices from 2004/2005. Therefore, an Ultra-Line-Narrowed F2 laser for dioptric projection systems is being developed under the ASET project 'The F2 Laser Lithography Development Project.' The target of this project is to achieve a F2 laser spectral bandwidth below 0.2 pm (FWHM) and an average power of 25W at a repetition rate of 5 kHz. Accurate measurements of the laser spectrum and of the laser wavelength stability are therefore very important. We therefore developed a VUV wavemeter with a Br-lamp to measure the absolute F2 laser wavelength. We obtained 157.631 nm for the main F2 laser transition using the Br-lamp reference lines at 157.4840 nm and 157.6385 nm. We have also developed a VUV high-resolution spectrometer to measure spectral profiles, which was calibrated by 157 nm coherent light source (157CLS). The 157CLS is a very narrow line-width, which can be approximated by delta function. The 157CLS had a line-width of 0.008 pm (Full-Width-At-Half- Maximum, FWHM) and a power of 0.1 mW. The instrument function of the high-resolution spectrometer measured by the 157CLS was 0.10 pm (FWHM). As a result, the deconvolved FWHM of the ultra-line narrowed F2 laser is 0.12 pm, the deconvolved spectral purity containing 95% of the total energy (E95) was less than 0.45 pm.
© (2002) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Takanori Nakaike, Osamu Wakabayashi, Toru Suzuki, Hakaru Mizoguchi, Kiyoharu Nakao, Ryoichi Nohdomi, Tatsuya Ariga, Naoki Kitatochi, Takashi Suganuma, Takahito Kumazaki, Kazuaki Hotta, and Masaki Yoshioka "Spectral metrologies for ultra-line-narrowed F2 laser", Proc. SPIE 4691, Optical Microlithography XV, (30 July 2002); https://doi.org/10.1117/12.474560
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