12 July 2002 Characterizing the process window of a double-exposure dark-field alternating phase-shift mask
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Abstract
After reviewing the normal approach to process window characterization and analysis used for a standard single exposure process, the applicability of that approach to a double exposure process is investigated. By properly designing the binary trim mask for a double exposure dark field alternating phase shift mask process, the influence of the trim exposure step on the final gate CD can be minimized. Flare during the rim exposure, however, is found to cause an undesired coupling of the two exposure steps. A method of accounting for this coupling effect for the gate CD process window is given.
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Chris A. Mack, Chris A. Mack, } "Characterizing the process window of a double-exposure dark-field alternating phase-shift mask", Proc. SPIE 4692, Design, Process Integration, and Characterization for Microelectronics, (12 July 2002); doi: 10.1117/12.475680; https://doi.org/10.1117/12.475680
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