Paper
12 July 2002 Defect detection for short-loop process and SRAM-cell optimization by using addressable failure site-test structures (AFS-TS)
Kelvin Yih-Yuh Doong, Sunnys Hsieh, S. C. Lin, J. R. Wang, Binson Shen, L. J. Hung, J. C. Guo, I. C. Chen, K. L. Young, Charles Ching-Hsiang Hsu
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Abstract
This work describes the utilization of a novel test structure called addressable failure site test structure for short-loop defect detection and proposed a prototype test structure for SRAM process defect detection in advanced semiconductor manufacturing. The novel test structures are used to identify the locations of killer defects which are then used to wafer map defect sites. This simple and efficient killer defect identification of process steps is employed as yield enhancement strategy.
© (2002) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Kelvin Yih-Yuh Doong, Sunnys Hsieh, S. C. Lin, J. R. Wang, Binson Shen, L. J. Hung, J. C. Guo, I. C. Chen, K. L. Young, and Charles Ching-Hsiang Hsu "Defect detection for short-loop process and SRAM-cell optimization by using addressable failure site-test structures (AFS-TS)", Proc. SPIE 4692, Design, Process Integration, and Characterization for Microelectronics, (12 July 2002); https://doi.org/10.1117/12.475644
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KEYWORDS
Defect detection

Semiconducting wafers

Structural design

Logic

Resistance

Electrical breakdown

Failure analysis

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