Exposing the DUV SCAAM: 75-nm imaging on the cheap

David Levenson; Takeaki Ebihara

doi:10.1117/12.475666

Translator Disclaimer

12 July 2002 Exposing the DUV SCAAM: 75-nm imaging on the cheap

David Levenson; Takeaki Ebihara

Author Affiliations +

Proceedings Volume 4692, Design, Process Integration, and Characterization for Microelectronics; (2002) https://doi.org/10.1117/12.475666
Event: Design, Process Integration, and Characterization for Microelectronics, 2002, Santa Clara, CA, United States

Abstract

Multiple exposure alternating phase-shifting mask lithography can exploit economies of scale to lower total manufacturing cost if chip designers adhere to simple rules, some of which also would apply to dipole illumination and other sub-wavelength lithography systems. The most promising system employs the Sidewall Chrome Alternating Aperture Mask structure which fulfills the theoretical expectations of strong phase-shift optics and offers the potential for low cost sub-100nm imaging with 248nm light. It has already printed 73nm semi-dense lines with 248nm light at k1 equals 0.19 and demonstrated a useful common processing window for less dense and isolated structures.

Citation Download Citation

David Levenson and Takeaki Ebihara "Exposing the DUV SCAAM: 75-nm imaging on the cheap", Proc. SPIE 4692, Design, Process Integration, and Characterization for Microelectronics, (12 July 2002); https://doi.org/10.1117/12.475666

ACCESS THE FULL ARTICLE