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12 July 2002 Exposing the DUV SCAAM: 75-nm imaging on the cheap
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Abstract
Multiple exposure alternating phase-shifting mask lithography can exploit economies of scale to lower total manufacturing cost if chip designers adhere to simple rules, some of which also would apply to dipole illumination and other sub-wavelength lithography systems. The most promising system employs the Sidewall Chrome Alternating Aperture Mask structure which fulfills the theoretical expectations of strong phase-shift optics and offers the potential for low cost sub-100nm imaging with 248nm light. It has already printed 73nm semi-dense lines with 248nm light at k1 equals 0.19 and demonstrated a useful common processing window for less dense and isolated structures.
© (2002) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
David Levenson and Takeaki Ebihara "Exposing the DUV SCAAM: 75-nm imaging on the cheap", Proc. SPIE 4692, Design, Process Integration, and Characterization for Microelectronics, (12 July 2002); https://doi.org/10.1117/12.475666
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