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12 July 2002 Meeting the challenges of process module and fab-wide active control for 300 mm, 130 nm, and beyond
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With the introduction of 300 mm wafers to the ICS production line and the move to the 130 nm technology node, the requirements from individual tool and process modules become more critical when optimizing productivity and yield. For achieving top performance for the Fab, an 'Active control' is required. This 'Active control' system includes several components: Health Monitor, Fault Detection, Advanced Process Control (APC) and Data Mining. This paper describes these components of 'Active Control' and how they have been applied for advanced production on individual tools as well as on process modules. Controlling the individual tool by using Fault Detection uses a multivariate model that defines the tool's expected behavior for a specific recipe and gives an early warning on any possible deviation. The APC system also uses a sophisticated algorithm to provide dynamic fine- tuning of intermediate process targets that enhance final global targets. Fab wide systems will need to capture and retain relevant data: MES, defects, E-Test, yield, etc. With all these generated data, an advanced Data Mining system is needed to correlate process steps and tool information to yield and to correlate individual tool data down to a chamber level and end of the line yield.
© (2002) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Israel Beinglass "Meeting the challenges of process module and fab-wide active control for 300 mm, 130 nm, and beyond", Proc. SPIE 4692, Design, Process Integration, and Characterization for Microelectronics, (12 July 2002);

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