12 July 2002 Profile parameter accuracy determined from scatterometric measurements
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As progress in ultra-large scale integration (ULSI) continues to lower the critical dimension (CD) requirements, measurement science is regularly witnessing changes in the monitoring techniques for the development and control of semiconductor fabrication processes. Microscopy, reflectometry and ellipsometry are examples of optical techniques constantly adjusted in attempts to provide mask and wafer state monitoring with non-invasive, rapid and in situ schemes. In the past years special attention has been devoted to optical diffraction as a potential method to satisfy those requirements, yielding the field of scatterometry. A linearized method was introduced to represent the relationship between parameters that describe a surface relief profile and the resulting scattering geometry data. An advantage of this approach is that describe a surface relief profile and the resulting scatterometric data. An advantage of this approach is that large databases containing profile information are not needed to process the scatterometric dat, resulting in a technique that is more versatile to process changes. In this paper, studies on the effect of changing profile parameters as well as measurement variables on the accuracy of retrieved parameter values using the linearized inversion method are presented.
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Rayan M. Al-Assaad, Emmanuel M. Drege, Dale M. Byrne, "Profile parameter accuracy determined from scatterometric measurements", Proc. SPIE 4692, Design, Process Integration, and Characterization for Microelectronics, (12 July 2002); doi: 10.1117/12.475665; https://doi.org/10.1117/12.475665


Structural design

Error analysis

Scatter measurement


Optical design

Critical dimension metrology

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