Fine Line Patterning Of Al, Polysilicon, And Polycide

R W Light; H B Bell; H A Macrc

doi:10.1117/12.941884

29 June 1984 Fine Line Patterning Of Al, Polysilicon, And Polycide

R W Light, H B Bell, H A Macrc

Proceedings Volume 0470, Optical Microlithography III: Technology for the Next Decade; (1984) https://doi.org/10.1117/12.941884
Event: 1984 Microlithography Conferences, 1984, Santa Clara, United States

Abstract

Patterning of 1.0-2.0 μm features in polysilicon, TaSi₂,/polysilicon (polycide) and aluminum films requires highly directional and selective etching techniques. Chlorine based reactive ion etching in a hexagonal cathode reactor can be used to achieve these profile control goals. The major factors affecting the degree of etch directionality in this system are the dc self bias voltage and etch rate. For example, anisotropic etching of Al can be performed in BC1₃/C1₂ plasmas at a dc self bias of -200 V. As this voltage is lowered, the lateral etch rate increases with respect to the vertical etch rate giving a nearly isotropic line profile at -100 V. At a given dc self bias voltage, anisotropic etching is favored by low etch rates. A similar voltage and etch rate dependence is found for etching of polycide in BC13/C12 plasmas. Polysilicon etching in C1₂/SF₆ plasmas displays the etch rate dependence without the voltage dependence. In each process selectivity for SiO₂ and photoresist degrades as the dc self bias potential becomes more negative.

Citation Download Citation

R W Light, H B Bell, and H A Macrc "Fine Line Patterning Of Al, Polysilicon, And Polycide", Proc. SPIE 0470, Optical Microlithography III: Technology for the Next Decade, (29 June 1984); https://doi.org/10.1117/12.941884

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