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11 July 2002 Characterization of nanocrystalline silicon films
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Abstract
The hydrogenated nanocrystalline silicon films have been prepared with plasma enhanced chemical vapor deposition method. The microstructure of these films has been studied by high resolution transmission electron microscopy, Raman scattering spectra and x-ray diffraction analysis methods. The films are especially valuable for some devices, for example, quantum dots, luminescence devices, and film pressure sensors etc. The nc-Si:H films show texture structure. The fractal dimension of this microstructure has been calculated with a Fourier filtered image. The microstructure properties of the films are discussed.
© (2002) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Hongyi Lin and Jian Zhu "Characterization of nanocrystalline silicon films", Proc. SPIE 4700, Smart Structures and Materials 2002: Smart Electronics, MEMS, and Nanotechnology, (11 July 2002); https://doi.org/10.1117/12.475049
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