11 July 2002 Novel scheme for a higher bandwidth sensor readout
Author Affiliations +
Abstract
Circuit design for a novel scheme for converting a multiple- valued output voltage forma sensor into a binary-coded output for signal processing is described here. Floating gate MOSFETs and floating gate potential diagrams have been used to design a readout integrated circuit in a standard 1.5 micrometers digital CMOS VLSI technology. The physical design is simulated and tested with SPICE using MOSIS BSIM3 MOS model parameters. Initial results on fabricated devices for the conversion of quaternary input into binary output have shown agreement with the corresponding simulated values. The method is simple and compatible with current CMOS processes. The circuit can be integrated with output of a sensor fabricated in MEMS-CMOS technology.
© (2002) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ashok Srivastava, Ashok Srivastava, Harish N. Venkata, Harish N. Venkata, Pratul K. Ajmera, Pratul K. Ajmera, } "Novel scheme for a higher bandwidth sensor readout", Proc. SPIE 4700, Smart Structures and Materials 2002: Smart Electronics, MEMS, and Nanotechnology, (11 July 2002); doi: 10.1117/12.475050; https://doi.org/10.1117/12.475050
PROCEEDINGS
12 PAGES


SHARE
Back to Top