A main problem associated with piezoresistive pressure sensors is the cross sensitivity sensed among different temperature. The influence of temperature is manifested as a change in the span and offset of the sensor output. In this paper, a new temperature compensation technique for a silicon pressure sensor is presented. We combine two sensors, the piezoresistive bridge and the compensation one, together to instead of the original single piezoresistive pressure sensor circuit. There are many advantages of using the configured double bridge technique, such as eliminates the zero pressure offset, compensates for the output variation, and gives the sensor extreme low drift of the temperature. Besides, it covers a wider temperature and pressure range, reduce the prime cost of sensors, and lessen the size of finished products. The simulation and experimental results are matched to our theoretical analysis. The feasibility of the new configure is proved.