Paper
18 June 1984 Characterization Techniques For X-Ray Lithography Submicron Metrology
S. A Harrell, D. Alexander
Author Affiliations +
Abstract
An electrical test structure and a methodology are proposed for equipment, process, and method characterization for submicron lithographic VLSI applications. An integrated approach of electrical test structures, optical test structures with manual or automatic optical inspection methods is described.
© (1984) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
S. A Harrell and D. Alexander "Characterization Techniques For X-Ray Lithography Submicron Metrology", Proc. SPIE 0471, Electron-Beam, X-Ray, and Ion-Beam Techniques for Submicrometer Lithographies III, (18 June 1984); https://doi.org/10.1117/12.942335
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Cited by 1 scholarly publication.
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KEYWORDS
Error analysis

Semiconducting wafers

Lithography

Metrology

X-ray lithography

Image registration

Optical inspection

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