X-Ray Resist Characterization With Monochromatic Synchrotron Radiation

R P Jaeger; P Pianetta

doi:10.1117/12.942338

18 June 1984 X-Ray Resist Characterization With Monochromatic Synchrotron Radiation

R P Jaeger, P Pianetta

Proceedings Volume 0471, Electron-Beam, X-Ray, and Ion-Beam Techniques for Submicrometer Lithographies III; (1984) https://doi.org/10.1117/12.942338
Event: 1984 Microlithography Conferences, 1984, Santa Clara, United States

Abstract

The first monochromatic resist exposures in the photon energy range 1 to 3.5 keV were completed at the in-vacuum lithogrpaphy beam line at the Stanford Synchrotron Radiation Laboratory (SSRL). Layered synthetic microstructures (LSM) were used as monochromators. The exposure times of 200 k Poly(chloromethylstyrene) (PCMS) through a boron nitride supported gold absorber mask were below 20 minutes. The sensitivity increase of PCMS at the chlorine edge was clearly observed. A considerable non-uniformity of the beam image in the 10 -20 um range was related to imperfections in the LSM substrate.

Citation Download Citation

R P Jaeger and P Pianetta "X-Ray Resist Characterization With Monochromatic Synchrotron Radiation", Proc. SPIE 0471, Electron-Beam, X-Ray, and Ion-Beam Techniques for Submicrometer Lithographies III, (18 June 1984); https://doi.org/10.1117/12.942338

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