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5 August 2002 9-μm cutoff 640x512 pixel GaAs/AlxGa1-xAs quantum well infrared photodetector handheld camera
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Abstract
A 9 micrometers cutoff 640x512 pixel hand-held quantum well infrared photodetector (QWIP) camera has been demonstrated with excellent imagery. Based on the single pixel test data, a noise equivalent differential temperature (NETD) of 8 mI is expected at 65K operating temperature with f/2 optics at 300K background. This focal plane array has shown background limited performance (BPLI) at 72K operating temperature with the same optics and background conditions. In this paper, we discuss the development of this very sensitive long wavelength infrared (LWIR) camera based on a GaAs/AlGaAs QWIP focal plane array and its performance in quantum efficiency, NETD, uniformity, and operability.
© (2002) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Sarath D. Gunapala, Sumith V. Bandara, John K. Liu, S. B. Rafol, C. A. Shott, Richard W. Jones, Stanley Laband, James T. Woolaway II, J. M. Fastenau, and Amy W.K. Liu "9-μm cutoff 640x512 pixel GaAs/AlxGa1-xAs quantum well infrared photodetector handheld camera", Proc. SPIE 4721, Infrared Detectors and Focal Plane Arrays VII, (5 August 2002); https://doi.org/10.1117/12.478841
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