5 August 2002 Indium gallium arsenide imaging with smaller cameras, higher-resolution arrays, and greater material sensitivity
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Proceedings Volume 4721, Infrared Detectors and Focal Plane Arrays VII; (2002); doi: 10.1117/12.478852
Event: AeroSense 2002, 2002, Orlando, FL, United States
Abstract
Indium Gallium Arsenide (InGaAs) photodiode arrays have numerous commercial, industrial, and military applications. During the past 10 years, great strides have been made in the development of these devices starting with simple 256-element linear photodiode arrays and progressing to the large 640 x 512 element area arrays now readily available. Linear arrays are offered with 512 elements on a 25 micron pitch with no defective pixels, and are used in spectroscopic monitors for wavelength division multiplexing (WDM) systems as well as in machine vision applications. A 320 x 240 solid-state array operates at room temperature, which allows development of a camera which is smaller than 25 cm3 in volume, weighs less than 100 g and uses less than 750 mW of power. Two dimensional focal plane arrays and cameras have been manufactured with detectivity, D*, greater than 1014 cm-(root)Hz/W at room temperature and have demonstrated the ability to image at night. Cameras are also critical tools for the assembly and performance monitoring of optical switches and add-drop multiplexers in the telecommunications industry. These same cameras are used for the inspection of silicon wafers and fine art, laser beam profiling, and metals manufacturing. By varying the Indium content, InGaAs photodiode arrays can be tailored to cover the entire short-wave infrared spectrum from 1.0 micron to 2.5 microns. InGaAs focal plane arrays and cameras sensitive to 2.0 micron wavelength light are now available in 320 x 240 formats.
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Martin H. Ettenberg, Marshall J. Cohen, Robert M. Brubaker, Michael J. Lange, Matthew T. O'Grady, Gregory H. Olsen, "Indium gallium arsenide imaging with smaller cameras, higher-resolution arrays, and greater material sensitivity", Proc. SPIE 4721, Infrared Detectors and Focal Plane Arrays VII, (5 August 2002); doi: 10.1117/12.478852; https://doi.org/10.1117/12.478852
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KEYWORDS
Indium gallium arsenide

Cameras

Photodiodes

Sensors

Gallium

Semiconducting wafers

Manufacturing

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