26 March 2002 Cathode layer parameters in high-pressure Xe excilamp
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Proceedings Volume 4747, International Conference on Atomic and Molecular Pulsed Lasers IV; (2002) https://doi.org/10.1117/12.460132
Event: International Conference on Atomic and Molecular Pulsed Lasers IV, 2001, Tomsk, Russian Federation
Abstract
The simulation of electron multiplication process in near cathode area is done. The analytical approximations for magnitudes, which are describing this process, are offered. The problem of determining the plasma parameters (electronic and ionic densities and currents, electric field strength) at the area, near to the cathode surface, is considered on the base of proposed approximations. The simple formulas, which are defining full current, width of cathode area and a voltage drop as function of field strength on the cathode surface, are presented.
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A. N. Tkachev, A. N. Tkachev, Sergey I. Yakovlenko, Sergey I. Yakovlenko, } "Cathode layer parameters in high-pressure Xe excilamp", Proc. SPIE 4747, International Conference on Atomic and Molecular Pulsed Lasers IV, (26 March 2002); doi: 10.1117/12.460132; https://doi.org/10.1117/12.460132
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