26 March 2002 Formation of pumping discharge of XeCl laser by means of semiconductor opening switch
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Proceedings Volume 4747, International Conference on Atomic and Molecular Pulsed Lasers IV; (2002) https://doi.org/10.1117/12.460108
Event: International Conference on Atomic and Molecular Pulsed Lasers IV, 2001, Tomsk, Russian Federation
Abstract
Results of experimental and theoretical investigations of XeCl with discharge formation by means of inductive energy storage and semiconductor opening switch have been presented. Main pumping of active medium has been performed by capacitive energy storage. Measured laser output energy is 0.8 J Laser efficiency calculated from energy stored in capacitive energy storage is 2.3%. Simulations predict that the optimization of pumping conditions may increase these parameters in two times.
© (2002) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yu. Bychkov, Yu. Bychkov, Evgenii H. Baksht, Evgenii H. Baksht, Alexei N. Panchenko, Alexei N. Panchenko, Victor F. Tarasenko, Victor F. Tarasenko, S. A. Yampolskaya, S. A. Yampolskaya, Arkadi G. Yastremsky, Arkadi G. Yastremsky, } "Formation of pumping discharge of XeCl laser by means of semiconductor opening switch", Proc. SPIE 4747, International Conference on Atomic and Molecular Pulsed Lasers IV, (26 March 2002); doi: 10.1117/12.460108; https://doi.org/10.1117/12.460108
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