29 May 2002 Hartree-Fock semiconductor Bloch equations and charge density correlations
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Proceedings Volume 4748, ICONO 2001: Fundamental Aspects of Laser-Matter Interaction and Physics of Nanostructures; (2002); doi: 10.1117/12.468964
Event: XVII International Conference on Coherent and Nonlinear Optics (ICONO 2001), 2001, Minsk, Belarus
Abstract
Generalized Semiconductor Bloch Equations are derived with using the fluctuation-dissipation theorem. Four operator expectation values like density-density correlators are calculated with account of coherent memory effects. Interactions with mixed plasmon-phonons modes and excitonic effects are taken into account. Comparison with different other theoretical approaches is provided. Numerical calculations of the spontaneous radiation produced by interband multiplasmon recombination of electron-hole pairs are fulfilled in dependence on the temperature and plasma concentration. It is shown that the intensity maximum of spontaneous radiation shifted to the region of the first LO- phonon satellite with increasing of concentration in accordance with experiments.
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A. A. Klyukanov, Natalia A. Loiko, I. V. Babushkin, V. Gurau, "Hartree-Fock semiconductor Bloch equations and charge density correlations", Proc. SPIE 4748, ICONO 2001: Fundamental Aspects of Laser-Matter Interaction and Physics of Nanostructures, (29 May 2002); doi: 10.1117/12.468964; http://dx.doi.org/10.1117/12.468964
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KEYWORDS
Plasmons

Plasma

Semiconductors

Electrons

Phonons

Dielectrics

Satellites

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