30 May 2002 Influence of photoinduced electronic processes on second-harmonic generation at reflection from a silicon surface: transversal Dember's effect
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Abstract
The electronic processes stimulated by laser pulses in an internal part of the weakly absorbing semiconductor (SC) are theoretically investigated. The physical and mathematical model of diffusive-drift and relaxational electronic processes called by infinite sequence of nanosecond laser pulses is offered. It is shown, that a consequent of these processes is the transversal Dember's effect - originating of a radial field both potential differences between lighted and unlighted parts of a volume of the SC. The calculation show, that in silicon the transversal Dember's potential difference is commensurable with representative values of a surface potential and, therefore, plays an essential role in nonlinear - optical processes on a surface of the SC.
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I. M. Baranova, K N. Evtyukhov, A. N. Muravyev, "Influence of photoinduced electronic processes on second-harmonic generation at reflection from a silicon surface: transversal Dember's effect", Proc. SPIE 4749, ICONO 2001: Novel Trends in Nonlinear Laser Spectroscopy and Optical Diagnostics and Lasers in Chemistry, Biophysics, and Biomedicine, (30 May 2002); doi: 10.1117/12.468892; https://doi.org/10.1117/12.468892
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