30 May 2002 Influence of photoinduced electronic processes on second-harmonic generation at reflection from a silicon surface: transversal Dember's effect
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Proceedings Volume 4749, ICONO 2001: Novel Trends in Nonlinear Laser Spectroscopy and Optical Diagnostics and Lasers in Chemistry, Biophysics, and Biomedicine; (2002); doi: 10.1117/12.468892
Event: XVII International Conference on Coherent and Nonlinear Optics (ICONO 2001), 2001, Minsk, Belarus
Abstract
The electronic processes stimulated by laser pulses in an internal part of the weakly absorbing semiconductor (SC) are theoretically investigated. The physical and mathematical model of diffusive-drift and relaxational electronic processes called by infinite sequence of nanosecond laser pulses is offered. It is shown, that a consequent of these processes is the transversal Dember's effect - originating of a radial field both potential differences between lighted and unlighted parts of a volume of the SC. The calculation show, that in silicon the transversal Dember's potential difference is commensurable with representative values of a surface potential and, therefore, plays an essential role in nonlinear - optical processes on a surface of the SC.
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I. M. Baranova, K N. Evtyukhov, A. N. Muravyev, "Influence of photoinduced electronic processes on second-harmonic generation at reflection from a silicon surface: transversal Dember's effect", Proc. SPIE 4749, ICONO 2001: Novel Trends in Nonlinear Laser Spectroscopy and Optical Diagnostics and Lasers in Chemistry, Biophysics, and Biomedicine, (30 May 2002); doi: 10.1117/12.468892; https://doi.org/10.1117/12.468892
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KEYWORDS
Nonlinear optics

Silicon

Gold

Semiconductors

Electrons

Reflection

Second-harmonic generation

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