24 July 2002 Low-intensity optical nonlinearity in thin films below the band edge
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Proceedings Volume 4751, ICONO 2001: Nonlinear Optical Phenomena and Nonlinear Dynamics of Optical Systems; (2002) https://doi.org/10.1117/12.475926
Event: XVII International Conference on Coherent and Nonlinear Optics (ICONO 2001), 2001, Minsk, Belarus
Abstract
Nonlinear optical properties of semiconductor and dielectric thin films are studied at a wavelength of 632.8 nm in the range of light intensity below 0.1 W/cm2 by the method of the spatial Fourier-spectroscopy of guided modes. The nonlinear refractive index and the absorption coefficient were found to be about 10-3 cm2/W for semiconductor films and multilayer structures and about 10-6/W for quartz glass films. Origin of this optical nonlinearity is considered as the modification of surface states in the band gap. New approach of the low- dimension structure investigation and new method of determination of a nanolayer thickness are considered. The method is based on recording of transformations of the angular Fourier-spectrum of the reflected light beam int eh self-effect case during gradually increasing of the incident light beam intensity up to 0.1 W/cm2 with excitation guided mode in thin-film structure.
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Alexander V. Khomchenko, Alexander V. Khomchenko, } "Low-intensity optical nonlinearity in thin films below the band edge", Proc. SPIE 4751, ICONO 2001: Nonlinear Optical Phenomena and Nonlinear Dynamics of Optical Systems, (24 July 2002); doi: 10.1117/12.475926; https://doi.org/10.1117/12.475926
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