29 May 2002 Determination of localization of carriers in disordered semiconductors by femtosecond spectroscopy
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Proceedings Volume 4752, ICONO 2001: Ultrafast Phenomena and Strong Laser Fields; (2002) https://doi.org/10.1117/12.469098
Event: XVII International Conference on Coherent and Nonlinear Optics (ICONO 2001), 2001, Minsk, Belarus
Abstract
A new method for determination of the mobility edge in disordered semiconductors by femtosecond pump-supercontinuum probe spectroscopy is presented. The method is based on the determination of the spectral dependence of a stretched exponential relaxation in a wide spectral range of probing, h(omega) probe equals 1.6 - 3.2 eV. The method is demonstrated for porous silicon. It is shown that the relaxation parameters for porous silicon have essential spectral dependence. The spectral dependence of stretched exponential index (beta) ((omega) ) give unique information about existence and position of the mobility edge in disordered materials, and thus may be used as effective tool in manifestation of the transition from localized to delocalized relaxation regime on the femtosecond time scale.
© (2002) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yurii E. Lozovik, Yurii E. Lozovik, A. L. Dobryakov, A. L. Dobryakov, S. A. Kovalenko, S. A. Kovalenko, S. P. Merkulova, S. P. Merkulova, S. Yu Volkov, S. Yu Volkov, Magnus Willander, Magnus Willander, } "Determination of localization of carriers in disordered semiconductors by femtosecond spectroscopy", Proc. SPIE 4752, ICONO 2001: Ultrafast Phenomena and Strong Laser Fields, (29 May 2002); doi: 10.1117/12.469098; https://doi.org/10.1117/12.469098
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