1 August 2002 100-kV high-resolution e-beam lithography system: JBX-9300FS
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Proceedings Volume 4754, Photomask and Next-Generation Lithography Mask Technology IX; (2002) https://doi.org/10.1117/12.476925
Event: Photomask and Next Generation Lithography Mask Technology IX, 2002, Yokohama, Japan
Electron beam lithography system JBX-9300FS has the specifications of high-resolution exposure down to 20nm line width and also of accuracy of 20nm field stitching and 25nm overlay for alignment exposure on wafer. In this paper we will introduce 100kV high voltage gun design, new functions of hardware and software and recent results of evaluation data of the system. It is expected that the high precision lithography with high accelerating fine beam by JBX-9300FS will greatly contribute to the use of not only direct writing for the development of next generation devices and the production of optical or communication devices but also the development and prototype production of new masks for Next Generation Lithography tools, such as x-ray, EUV, EPL, and LEEPL.
© (2002) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Hitoshi Takemura, Hitoshi Takemura, Hirofumi Ohki, Hirofumi Ohki, Moriyuki Isobe, Moriyuki Isobe, } "100-kV high-resolution e-beam lithography system: JBX-9300FS", Proc. SPIE 4754, Photomask and Next-Generation Lithography Mask Technology IX, (1 August 2002); doi: 10.1117/12.476925; https://doi.org/10.1117/12.476925

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