1 August 2002 Adjustment of optical proximity correction (OPC) software for mask process correction (MPC): Module 2. Lithography simulation based on optical mask writing tool simulation
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Proceedings Volume 4754, Photomask and Next-Generation Lithography Mask Technology IX; (2002) https://doi.org/10.1117/12.476988
Event: Photomask and Next Generation Lithography Mask Technology IX, 2002, Yokohama, Japan
Abstract
We develop a Mask Process Correction (MPC) set of tools in collaboration with DuPont Photomasks, Mentor Graphics and CEA-LETI. The MPC project consists of 3 modules.
© (2002) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Alexandra Barberet, Alexandra Barberet, Peter D. Buck, Peter D. Buck, Gilles L. Fanget, Gilles L. Fanget, Olivier Toublan, Olivier Toublan, Jean-Charles Richoilley, Jean-Charles Richoilley, Michel Tissier, Michel Tissier, } "Adjustment of optical proximity correction (OPC) software for mask process correction (MPC): Module 2. Lithography simulation based on optical mask writing tool simulation", Proc. SPIE 4754, Photomask and Next-Generation Lithography Mask Technology IX, (1 August 2002); doi: 10.1117/12.476988; https://doi.org/10.1117/12.476988
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