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1 August 2002 CAR dry etching technology to produce 0.13-μm reticle
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Proceedings Volume 4754, Photomask and Next-Generation Lithography Mask Technology IX; (2002) https://doi.org/10.1117/12.476951
Event: Photomask and Next Generation Lithography Mask Technology IX, 2002, Yokohama, Japan
Abstract
Process optimizations have been done to carried out xon '0.13micrometers ' reticle manufacturing with feature sizes of under 520nm. Micro-leading < 10nm and CD uniformity (3S) < 10nm process for binary Cr reticle can be achieved with dry etching process using chemical amplify resists blanks. HL-950 writer with resist films of 400nm and dy etching with Centura system were adopted for the purpose. It has shown that by optimizing selectivity window in Centura system without assistant gas addition, one could improve the process capability significantly. Design of experiment was applied to investigating the effects of source power, bias power and total pressure on CD uniformity, Micro-loading, Linearity and Process bias. With the DOE results, the process conditions could be fine-tuned to an optimal set of variables, which allow us to manufacture 0.13 micrometers masks.
© (2002) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
W. Z. Chou, Fei-Gwo Tsai, C. C. Tuo, Chue San Yoo, T. S. Tsai, and Lawrence Shue "CAR dry etching technology to produce 0.13-μm reticle", Proc. SPIE 4754, Photomask and Next-Generation Lithography Mask Technology IX, (1 August 2002); https://doi.org/10.1117/12.476951
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