1 August 2002 CD variations from nontrivial mask-related factors
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Proceedings Volume 4754, Photomask and Next-Generation Lithography Mask Technology IX; (2002) https://doi.org/10.1117/12.476928
Event: Photomask and Next Generation Lithography Mask Technology IX, 2002, Yokohama, Japan
Mask critical dimension (CD) control relies on advanced write tools and resist processes. However, a specified write tool and process does not necessarily guarantee high mask quality. As the mask feature size shrinks to below 500 nm, there are other mask-related factors that can also significantly affect the mask performance. This paper discusses the impact of those non-trivial factors, such as mask writing tool and process control, calibration of mask CD metrology, blank quality of attenuated phase shift mask (ATPSM), pellicle degradation due to 193 nm laser irradiation, and profile of mask features, etc.
© (2002) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Z. Mark Ma, Z. Mark Ma, Won D. Kim, Won D. Kim, Benjamen M. Rathsack, Benjamen M. Rathsack, Guoqiang Xing, Guoqiang Xing, Mark H. Somervell, Mark H. Somervell, Hyesook Hong, Hyesook Hong, } "CD variations from nontrivial mask-related factors", Proc. SPIE 4754, Photomask and Next-Generation Lithography Mask Technology IX, (1 August 2002); doi: 10.1117/12.476928; https://doi.org/10.1117/12.476928

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