1 August 2002 Comparative evaluation of e-beam sensitive chemically amplified resists for mask making
Author Affiliations +
Proceedings Volume 4754, Photomask and Next-Generation Lithography Mask Technology IX; (2002) https://doi.org/10.1117/12.476944
Event: Photomask and Next Generation Lithography Mask Technology IX, 2002, Yokohama, Japan
Abstract
Positive tone chemically amplified resists CAP209, EP012M (TOK), KRS-XE (JSR) and FEP171 (Fuji) were evaluated for mask making. The investigations were performed on an advanced tool set comprising of a Steag coater ASR5000, Steag developer ASP5000, 50kV e-beam writer Leica SB350, UNAXIS MASK ETCHER III , STS ICP silicon etcher and a CD-SEM KLA8100. We investigated and compared resolution, sensitivity, resist slope, dark field loss, CD-uniformity, line edge roughness, and etch resistance of the evaluated resists. Furthermore, the influence of post coating delay, post exposure delay and other process parameters on the resist performance was determined.
© (2002) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Mathias Irmscher, Mathias Irmscher, Dirk Beyer, Dirk Beyer, Joerg Butschke, Joerg Butschke, Chris Constantine, Chris Constantine, Thomas Hoffmann, Thomas Hoffmann, Corinna Koepernik, Corinna Koepernik, Christian Krauss, Christian Krauss, Bernd Leibold, Bernd Leibold, Florian Letzkus, Florian Letzkus, Dietmar Mueller, Dietmar Mueller, Reinhard Springer, Reinhard Springer, Peter Voehringer, Peter Voehringer, } "Comparative evaluation of e-beam sensitive chemically amplified resists for mask making", Proc. SPIE 4754, Photomask and Next-Generation Lithography Mask Technology IX, (1 August 2002); doi: 10.1117/12.476944; https://doi.org/10.1117/12.476944
PROCEEDINGS
12 PAGES


SHARE
Back to Top