1 August 2002 Data processing for LEEPL mask: splitting and placement correction
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Proceedings Volume 4754, Photomask and Next-Generation Lithography Mask Technology IX; (2002) https://doi.org/10.1117/12.476997
Event: Photomask and Next Generation Lithography Mask Technology IX, 2002, Yokohama, Japan
Abstract
We have been developing a practical mask-data processing system for low-energy electron-beam proximity-projection lithography (LEEPL), a promising candidate for the next generation lithography. Several problems inherent to the unique mask structure for LEEPL have been solved in principle. In this paper, the overview of the system is demonstrated, with special focus on the corrections for the possible violation of complementary splitting on the boundary of neighboring data-processing units as well as the image placement error due to mask distortion.
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Isao Ashida, Isao Ashida, Shinji Omori, Shinji Omori, Hidetoshi Ohnuma, Hidetoshi Ohnuma, } "Data processing for LEEPL mask: splitting and placement correction", Proc. SPIE 4754, Photomask and Next-Generation Lithography Mask Technology IX, (1 August 2002); doi: 10.1117/12.476997; https://doi.org/10.1117/12.476997
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