1 August 2002 Defect dispositioning using mask printability analysis on alternating phase-shifting masks
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Proceedings Volume 4754, Photomask and Next-Generation Lithography Mask Technology IX; (2002) https://doi.org/10.1117/12.476976
Event: Photomask and Next Generation Lithography Mask Technology IX, 2002, Yokohama, Japan
Abstract
In this paper, the simulation of wafer images for Alternating Aperture Phase Shift Masks is addressed by comparing wafer printing image with simulation. This is the first accuracy study for Virtual Stepper's newly developed AAPSM simulation module. The test reticle used includes 70 nm gate structures with three types of programmed phase defects: edge, corner, and center defects on rectangular shifter patterns. Wafer exposures are performed using 193 nm imaging technology and inspection images generated on a KLA-Tencor's SLF27 system. These images are used by the Virtual Stepper System to provide simulated wafer images using the specified stepper parameters. The results are compared to the simulation results from the Aerial Image Measurement System (AIMSTM) and SEM images of resist patterns.
© (2002) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Chung-Hsing Chang, Chung-Hsing Chang, Chen-Hao Hsieh, Chen-Hao Hsieh, San-De Tzu, San-De Tzu, Chang-Min Dai, Chang-Min Dai, Burn Jeng Lin, Burn Jeng Lin, Linyong Pang, Linyong Pang, Qi-De Qian, Qi-De Qian, Jiunn-Hung Chen, Jiunn-Hung Chen, Jason H. Huang, Jason H. Huang, } "Defect dispositioning using mask printability analysis on alternating phase-shifting masks", Proc. SPIE 4754, Photomask and Next-Generation Lithography Mask Technology IX, (1 August 2002); doi: 10.1117/12.476976; https://doi.org/10.1117/12.476976
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