1 August 2002 Detection of half-tone PSM pinhole with DUV reflected light source
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Proceedings Volume 4754, Photomask and Next-Generation Lithography Mask Technology IX; (2002) https://doi.org/10.1117/12.476962
Event: Photomask and Next Generation Lithography Mask Technology IX, 2002, Yokohama, Japan
Abstract
The defect detection capability for a minute pinhole by a newly developed mask inspection system MC-3500 with DUV reflected light source is reported. The detection sensitivity of a minute pinhole less than 180 nm on a KrF phase shift mask (PSM) with transmitted light source is limited because the pinhole signal intensity is influenced by the diffraction light. The signal intensity of the pinhole both by the reflected light source and transmitted light source was calculated by an optical simulator, and the actual pinhole signal of the KrF PSM and that of the ArF PSM were measured using the MC-3500 with reflected light source. It was found that the 100 nm minute pinhole, which was not detected by the inspection with the transmitted light source, was detected by the inspection with the reflected light source. This shows the effectiveness of the reflective inspection, thus proved that the newly developed MC-3500 inspection system with reflective inspection capability has very high defect detection sensitivity for the advanced masks of 100-130 nm rule and below devices.
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Takeshi Fujiwara, Hiromu Inoue, Kentaro Okuda, Takehiko Nomura, Mitsuo Tabata, Satoshi Endo, "Detection of half-tone PSM pinhole with DUV reflected light source", Proc. SPIE 4754, Photomask and Next-Generation Lithography Mask Technology IX, (1 August 2002); doi: 10.1117/12.476962; https://doi.org/10.1117/12.476962
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