The imaging concept of electron projection lithography (EPL) with a silicon stencil reticle is explained. A silicon membrane thickness of 1-2 micrometers is suitable for the reticle. A scattering contrast of greater than 99 percent is expected. Nikon is developing EPL tool as EB stepper. Sub- field size is 0.25 mm square and deflection length is 5mm on wafer. The wafer is exposed with a sub-field by sub-field bias by the deflection control of the electron beam. The basic system configuration of EB stepper is introduced. Examples of error budgets of CD variations and Overlay/Stitching accuracy for 65nm technology node are shown. The latest data of electron optics and vacuum compatible stages for EB stepper are introduced. 70nm patterns are resolved in the entire sub-field. The status of infrastructure of technology related to EPL reticle and data post processing software are explained.