1 August 2002 EPL technology development
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Proceedings Volume 4754, Photomask and Next-Generation Lithography Mask Technology IX; (2002); doi: 10.1117/12.476921
Event: Photomask and Next Generation Lithography Mask Technology IX, 2002, Yokohama, Japan
Abstract
The imaging concept of electron projection lithography (EPL) with a silicon stencil reticle is explained. A silicon membrane thickness of 1-2 micrometers is suitable for the reticle. A scattering contrast of greater than 99 percent is expected. Nikon is developing EPL tool as EB stepper. Sub- field size is 0.25 mm square and deflection length is 5mm on wafer. The wafer is exposed with a sub-field by sub-field bias by the deflection control of the electron beam. The basic system configuration of EB stepper is introduced. Examples of error budgets of CD variations and Overlay/Stitching accuracy for 65nm technology node are shown. The latest data of electron optics and vacuum compatible stages for EB stepper are introduced. 70nm patterns are resolved in the entire sub-field. The status of infrastructure of technology related to EPL reticle and data post processing software are explained.
© (2002) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Kazuaki Suzuki, "EPL technology development", Proc. SPIE 4754, Photomask and Next-Generation Lithography Mask Technology IX, (1 August 2002); doi: 10.1117/12.476921; https://doi.org/10.1117/12.476921
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KEYWORDS
Reticles

Semiconducting wafers

Silicon

Electron beams

Critical dimension metrology

Sensors

Wafer-level optics

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