1 August 2002 EUVL mask fabrication for the 45-nm node
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Proceedings Volume 4754, Photomask and Next-Generation Lithography Mask Technology IX; (2002) https://doi.org/10.1117/12.476989
Event: Photomask and Next Generation Lithography Mask Technology IX, 2002, Yokohama, Japan
The extreme ultraviolet lithography (EUVL) mask differs from its predecessors in many ways. The most significant change is that the EUVL mask is reflective, introducing many new film layers and mask sensitivities. An additional complication is the small linewidths associated with the 45-nm node that is targeted for EUVL mask introduction. This paper concentrates on the physical specifications associated with the 45-nm node EUVL mask. Relative to current masks, the defect levels must be lower and the film quality must be higher. Standard cleans may be incompatible with new mask requirements. To understand the development requirements, the cleaning efficiency, film removal, film roughness, defect levels and film reflectivity are quantified on both EUVL mask film monitors and EUVL masks. Target specifications and measured properties of the 45-nm node masks will be compared.
© (2002) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Emily Fisch, Emily Fisch, Louis Kindt, Louis Kindt, Michael J. Lercel, Michael J. Lercel, Kenneth C. Racette, Kenneth C. Racette, Carey T. Williams, Carey T. Williams, "EUVL mask fabrication for the 45-nm node", Proc. SPIE 4754, Photomask and Next-Generation Lithography Mask Technology IX, (1 August 2002); doi: 10.1117/12.476989; https://doi.org/10.1117/12.476989


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