1 August 2002 Early mask results of KRS-XE and current progress in improving sensitivity and etch resistance
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Proceedings Volume 4754, Photomask and Next-Generation Lithography Mask Technology IX; (2002) https://doi.org/10.1117/12.476946
Event: Photomask and Next Generation Lithography Mask Technology IX, 2002, Yokohama, Japan
Abstract
KRS-XE is a chemically amplified resist developed to enable electron-beam lithography for mask making at the 100nm node. This material has been shown to provide an excellent process window for mask manufacturing at this node. Characterization of this material using both 50keV raster and 75keV vector scan e-beam exposure systems will be presented. A higher sensitivity version of this material has been developed specifically for a vector, shaped beam 50keV application. Initial mask manufacturing results for this higher sensitivity version of KRS-XE will be presented for 75keV. In addition, recent developments using KRS-XE formulations modified to achieve high sensitivity and improved etch resistance will be discussed.
© (2002) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Christina Deverich, Christina Deverich, Andrew J. Watts, Andrew J. Watts, Paul A. Rabidoux, Paul A. Rabidoux, Thomas J. Cardinali, Thomas J. Cardinali, William A. Aaskov, William A. Aaskov, Peter Levin, Peter Levin, Wu-Song Huang, Wu-Song Huang, Wayne M. Moreau, Wayne M. Moreau, Marie Angelopoulos, Marie Angelopoulos, Karen E. Petrillo, Karen E. Petrillo, David Madeiros, David Madeiros, } "Early mask results of KRS-XE and current progress in improving sensitivity and etch resistance", Proc. SPIE 4754, Photomask and Next-Generation Lithography Mask Technology IX, (1 August 2002); doi: 10.1117/12.476946; https://doi.org/10.1117/12.476946
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