1 August 2002 Etching selectivity and surface profile of attenuated phase-shifting mask using CF4/O2/He inductively coupled plasma (ICP)
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Proceedings Volume 4754, Photomask and Next-Generation Lithography Mask Technology IX; (2002) https://doi.org/10.1117/12.476952
Event: Photomask and Next Generation Lithography Mask Technology IX, 2002, Yokohama, Japan
Abstract
The selectivity and etched profile of MoSiON in high-density CF4/O2/He inductively coupled plasma (ICP) have been studied. The etched profiles of MoSiON along with the quartz surface morphologies were investigated as a function of etching parameters by scanning electron microscopy (SEM). We varied pressure from 5 mtorr to 20 mtorr and CF4 flow rate from 15 sccm to 40 sccm. A smooth quartz surface and a vertical MoSiON slope were observed under 10 sccm CF4, 15 sccm of O2 flow rate, -240 V of DC bias and 5 mtorr pressure. And the other conditions showed rough quartz surface and bad MoSiON slope. Only at the appropriate CF4/O2 Flow rate, high vapor pressure compounds inhibits nonuniform quartz etching.
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Si-Yeul Yoon, Si-Yeul Yoon, Se-Jong Choi, Se-Jong Choi, Yong-Dae Kim, Yong-Dae Kim, Dong-Hyuk Lee, Dong-Hyuk Lee, Han-Sun Cha, Han-Sun Cha, Jin-Min Kim, Jin-Min Kim, Sang-Soo Choi, Sang-Soo Choi, Soo Hong Jeong, Soo Hong Jeong, } "Etching selectivity and surface profile of attenuated phase-shifting mask using CF4/O2/He inductively coupled plasma (ICP)", Proc. SPIE 4754, Photomask and Next-Generation Lithography Mask Technology IX, (1 August 2002); doi: 10.1117/12.476952; https://doi.org/10.1117/12.476952
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