Fabrication of the 70-nm line patterns with ArF chromeless phase-shift masks

Haruo Iwasaki; Shinji Ishida; Takeo Hashimoto

doi:10.1117/12.477001

1 August 2002 Fabrication of the 70-nm line patterns with ArF chromeless phase-shift masks

Haruo Iwasaki, Shinji Ishida, Takeo Hashimoto

Proceedings Volume 4754, Photomask and Next-Generation Lithography Mask Technology IX; (2002) https://doi.org/10.1117/12.477001
Event: Photomask and Next Generation Lithography Mask Technology IX, 2002, Yokohama, Japan

Abstract

The problems of chromeless phase shift masks (CL-PSMs), which cannot fabricate large patterns, can be overcome by using CL-PSMs that have opaque chrome (Cr). This paper presents evaluation results for these enhanced CL-PSMs. We exposed with an ArF scanner of 0.60 numerical aperture with annular illumination and we used a positive chemically amplified ArF resist 0.21 μm thick. We did not use assist bars. For it was difficult to make assist bars which were smaller than sub-70-nm main patterns. We obtained good critical dimension controlled patterns with bias optical proximity correction. The mask error enhancement factors were about 1 for >300-nm pitch patterns. The resist pattern profiles were good. The depth of focus of isolated line patterns was about 0.3 μm. We could fabricate random logic patterns that had various pattern widths from 70 nm to more than 100 nm.

Citation Download Citation

Haruo Iwasaki, Shinji Ishida, and Takeo Hashimoto "Fabrication of the 70-nm line patterns with ArF chromeless phase-shift masks", Proc. SPIE 4754, Photomask and Next-Generation Lithography Mask Technology IX, (1 August 2002); https://doi.org/10.1117/12.477001

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