1 August 2002 Imaging capability of low-energy electron-beam proximity projection lithography toward the 70-nm node
Author Affiliations +
Proceedings Volume 4754, Photomask and Next-Generation Lithography Mask Technology IX; (2002); doi: 10.1117/12.476996
Event: Photomask and Next Generation Lithography Mask Technology IX, 2002, Yokohama, Japan
Abstract
The technological systematics for low-energy electron-beam proximity-projection lithography (LEEPL) is discussed with particular focuses on the key ingredients such as mask, resist and alignment. We have developed a mechanically rigid 1X stencil mask supported by a grid-work of struts, high-resolution chemically-amplified resists to be used for multi layer processes, and the accurate alignment method to overlay complementary split patterns. The LEEPL beta machine as combined with these techniques was successfully used to demonstrate its imaging capability for the 70 nm node.
© (2002) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Hiroyuki Nakano, Kumiko Oguni, Shinichiro Nohdo, Kaoru Koike, Shigeru Moriya, "Imaging capability of low-energy electron-beam proximity projection lithography toward the 70-nm node", Proc. SPIE 4754, Photomask and Next-Generation Lithography Mask Technology IX, (1 August 2002); doi: 10.1117/12.476996; https://doi.org/10.1117/12.476996
PROCEEDINGS
10 PAGES


SHARE
KEYWORDS
Photomasks

Charged-particle lithography

Optical alignment

Lithography

Semiconducting wafers

Electron beam lithography

Projection lithography

RELATED CONTENT


Back to Top