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1 August 2002 Improvements in MoSi EAPSM CD bias and iso-dense linearity plasma etch results utilizing design of experiments process optimization of Gen III ICP plasma source
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Proceedings Volume 4754, Photomask and Next-Generation Lithography Mask Technology IX; (2002) https://doi.org/10.1117/12.476973
Event: Photomask and Next Generation Lithography Mask Technology IX, 2002, Yokohama, Japan
Abstract
A continuous improvement study of the Gen III ICP MoSi etch process is accomplished through the use of high resolution factorial experimental design (DOE). The main goal of this work is to more fully characterize the process space within a commercial GEN III MoSi plasma etch process reactor. Particular emphasis is placed upon the improvement of CD bias loss as well as isolated/dense feature linearity within the same mask pattern. CD uniformity is also monitored as well as MoSi etch profile. Several novel etchant gases are exported prior to the Designed Experiment to characterize the effect of alternate chemistries on MoSi etch performance; these results are reported. The Designed Experiment was utilized to optimize the most promising alternate gas chemistry in terms of CD performance, MoSi Etch Rate uniformity and Selectivity to Quartz. The novel gases included a known polymerizing etch gas as well as etch rate enhancement gases which have also historically been used within the silicon process industry to enhance selectivity to silicon dioxide and presumably, quartz.
© (2002) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jason Plumhoff, Chris Constantine, J. Shin, and Emmanuel Rausa "Improvements in MoSi EAPSM CD bias and iso-dense linearity plasma etch results utilizing design of experiments process optimization of Gen III ICP plasma source", Proc. SPIE 4754, Photomask and Next-Generation Lithography Mask Technology IX, (1 August 2002); https://doi.org/10.1117/12.476973
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