23 April 2002 Mask design optimization for 70-nm technology node using chromeless phase lithography (CPL) based on 100% transmission phase-shifting mask
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Proceedings Volume 4754, Photomask and Next-Generation Lithography Mask Technology IX; (2002); doi: 10.1117/12.476927
Event: Photomask and Next Generation Lithography Mask Technology IX, 2002, Yokohama, Japan
Abstract
Chromeless phase lithography (CPL, or previously named CLM) is based on using 100 percent transmission PSM in the critical patterning area. However, unlike the conventional single chromeless phase edge type, CPL forms pattern images based on a pair of symmetrical phase-edges in proximity. In principle, the mask pattern layout is very similar to attenuated phase shift mask. There is no need to be concerned with neither phase assignment nor phase conflict. The mask layout complexity is greatly reduced as compared to the requirement for alternating PSM. In this report, we discuss how to optimize CPL mask design for a full-chip application. One effective method is by applying chrome patches or 'chrome shields' on top of the optically sensitive pattern areas. In 'large' 100 percent phase transmission areas, the chrome shield can prevent printing an undesirable pattern. As for the 'critical' pattern areas, chrome shields can be effectively used for controlling optical proximity effects in order to enhance the printing performance. We found chrome scattering bar (SB) OPC is necessary to improve process window. Using LithoCruiser simulation, we predict that it is possible to obtain manufacturable overlapped-process-window across a full range of feature pitch for 70nm line CD target with ArF exposure.
© (2002) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
J. Fung Chen, Douglas J. Van Den Broeke, Michael Hsu, Thomas L. Laidig, Kurt E. Wampler, Xuelong Shi, Stephen Hsu, Ted Shafer, "Mask design optimization for 70-nm technology node using chromeless phase lithography (CPL) based on 100% transmission phase-shifting mask", Proc. SPIE 4754, Photomask and Next-Generation Lithography Mask Technology IX, (23 April 2002); doi: 10.1117/12.476927; http://dx.doi.org/10.1117/12.476927
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KEYWORDS
Photomasks

Phase shifts

Lithography

Optical proximity correction

Optical lithography

Semiconducting wafers

Phase shifting

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