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1 August 2002 Pattern printability for reflectance degradation of Mo/Si mask blanks in EUV lithography
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Proceedings Volume 4754, Photomask and Next-Generation Lithography Mask Technology IX; (2002) https://doi.org/10.1117/12.476991
Event: Photomask and Next Generation Lithography Mask Technology IX, 2002, Yokohama, Japan
Abstract
The effect of variations in the thickness of the multilayer of a mask blank on pattern printability was examined. The multilayer was assumed to consists of 40 Si/Mo bilayers. For a given total thickness, variations in the thicknesses of the individual SI and Mo monolayers produce such a small loss in reflectance that printability remains good for both binary and attenuated phase-shifting masks, even when such variations exist. On the other hand, variations in the total thickness shift the peak of the reflectance spectrum, which degrades the reflectance on a wafer. In this case, printability for a binary mask is determined simply by the reflectance loss on a wafer, while printability for an attenuated PSM is strongly influenced by variations in total thickness because they change the phase and attenuated reflectance.
© (2002) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Minoru Sugawara, Masaaki Ito, Akira Chiba, Eiichi Hoshino, Hiromasa Yamanashi, Hiromasa Hoko, Taro Ogawa, Byoung Taek Lee, Takashi Yoneda, Masashi Takahashi, Iwao Nishiyama, and Shinji Okazaki "Pattern printability for reflectance degradation of Mo/Si mask blanks in EUV lithography", Proc. SPIE 4754, Photomask and Next-Generation Lithography Mask Technology IX, (1 August 2002); https://doi.org/10.1117/12.476991
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