1 August 2002 Process development of 6-in EUV mask with TaBN absorber
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Proceedings Volume 4754, Photomask and Next-Generation Lithography Mask Technology IX; (2002) https://doi.org/10.1117/12.477007
Event: Photomask and Next Generation Lithography Mask Technology IX, 2002, Yokohama, Japan
Abstract
6-inch EUV masks consisting of Mo/Si multilayers and patterned CrX buffer and TaBN absorber layers have recently been developed and evaluated. Mo/Si multilayers with a relatively high EUV reflectivity of 66 percent and an excellent uniformity were obtained on the polished ULE substrates by an ion beam sputtering method. The multilayers showed high durability to the acid abased cleaning and baking at 150 degrees C used in the conventional mask-making process. The Cr based film was optimized as a repair buffer to obtain a high reflectivity of 52 percent at 257 nm and low stress within 100 MPa. TaBN absorbers with a low reflectivity were obtained by optimizing the film compositions, which resulted in a high image contrast to the multilayer for DUV inspection. An EUV contrast level of 99 percent was achieved for a thinner, 100-nm thick absorber stack. Using the optimized mask process, EUV mask with patterns of 180-nm width were successfully obtained, without a significant drop in EUV reflectivity.
© (2002) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Tsutomu Shoki, Tsutomu Shoki, Morio Hosoya, Morio Hosoya, Takeru Kinoshita, Takeru Kinoshita, Hideo Kobayashi, Hideo Kobayashi, Youichi Usui, Youichi Usui, Ryo Ohkubo, Ryo Ohkubo, Shinichi Ishibashi, Shinichi Ishibashi, Osamu Nagarekawa, Osamu Nagarekawa, } "Process development of 6-in EUV mask with TaBN absorber", Proc. SPIE 4754, Photomask and Next-Generation Lithography Mask Technology IX, (1 August 2002); doi: 10.1117/12.477007; https://doi.org/10.1117/12.477007
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