1 August 2002 Process of manufacturing and inspection of high-end (ternary) tritone EAPSM reticles for 0.13-μm design rule generation
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Proceedings Volume 4754, Photomask and Next-Generation Lithography Mask Technology IX; (2002) https://doi.org/10.1117/12.476924
Event: Photomask and Next Generation Lithography Mask Technology IX, 2002, Yokohama, Japan
Abstract
Embedded attenuated phase shift masks (EAPSMs) are being used in the semiconductor industry for high-density patterning of critical layers, such as gate and contact layers of circuit devices, of the 130 nm node and beyond. This paper focuses on the manufacturing and inspection of ternary (tritone) phase shift masks designed for the 130 nm design-rule generation. The manufacturing flow is presented and the use of the ARISTM100i mask inspection system for inspection is demonstrated.
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Steve Tuan, Gidon Gottlib, Anja Rosenbusch, "Process of manufacturing and inspection of high-end (ternary) tritone EAPSM reticles for 0.13-μm design rule generation", Proc. SPIE 4754, Photomask and Next-Generation Lithography Mask Technology IX, (1 August 2002); doi: 10.1117/12.476924; https://doi.org/10.1117/12.476924
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