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1 August 2002 Raster scan patterning solution for 100- and 70-nm OPC masks
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Proceedings Volume 4754, Photomask and Next-Generation Lithography Mask Technology IX; (2002)
Event: Photomask and Next Generation Lithography Mask Technology IX, 2002, Yokohama, Japan
Photomask complexity threatens to outpace mask pattern generator productivity, as semiconductor devices are scaled down and optical proximity correction (OPC) becomes commonplace. Raster scan architectures are well suited to the challenge of maintaining mask throughput and mask quality despite these trends. The MEBES eXara mask pattern generator combines the resolution of a finely focused 50 keV electron beam with the productivity and accuracy of Raster Graybeam writing. Features below 100 nm can be imaged, and OPC designs are produced with consistent fidelity. Write time is independent of resist sensitivity, allowing high-dose processes to be extended, and relaxing sensitivity constraints on chemically amplified resists. Data handling capability is enhanced by a new hierarchical front end and hiearchical data format, building on an underlying writing strategy that is efficient for OPC patterns. A large operating range enables the MEBES eXara system to support the production of 100 nm photomasks, and the development of 70 nm masks.
© (2002) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Frank E. Abboud, Ki-Ho Baik, Varoujan Chakarian, Damon M. Cole, Robert L. Dean, Mark A. Gesley, Herb Gillman, William C. Moore, Mark Mueller, Robert J. Naber, Thomas H. Newman, Romin Puri, Frederick Raymond III, and Mario Rougieri "Raster scan patterning solution for 100- and 70-nm OPC masks", Proc. SPIE 4754, Photomask and Next-Generation Lithography Mask Technology IX, (1 August 2002);


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