Double-sided bulk micromachining of SOI films using room-temperature oxygen-plasma-assisted bonding

Anke Sanz-Velasco; Henrik Roedjegard; Gert I. Andersson

doi:10.1117/12.462867

19 April 2002 Double-sided bulk micromachining of SOI films using room-temperature oxygen-plasma-assisted bonding

Anke Sanz-Velasco, Henrik Roedjegard, Gert I. Andersson

Author Affiliations +

Proceedings Volume 4755, Design, Test, Integration, and Packaging of MEMS/MOEMS 2002; (2002) https://doi.org/10.1117/12.462867
Event: Symposium on Design, Test, Integration, and Packaging of MEMS/MOEMS 2002, 2002, Cannes-Mandelieu, France

Abstract

A new, robust method for double sided processing bulk micromachined components made of an SOI (silicon on insulator) material is presented. Transfer of the SOI film to a second wafer using a bonding step enables double sided processing on 'flat' surfaces of the device film of the SOI wafer, thus avoiding lithography in deep cavities, high temperatures and high voltage processing steps. Room temperature oxygen plasma assisted wafer bonding was used to transfer the SOI film. This bonding step is expected to be CMOS compatible, which, makes it possible to integrate standard process electronics with micromachined devices on the wafer level. Before the bonding step the processing of the SOI and of the second wafer put no requirements on common compatibility, i.e. CMOS compatibility. In addition to double sided lithography and room temperature oxygen plasma assisted wafer bonding, the fabrication process makes use of the CMOS compatible anisotropic TMAH (tetramethyl ammonium hydroxide) etch and etch back technique. Fabrication of bulk micromachined accelerometer structures has shown that the process is successful.

Citation Download Citation

Anke Sanz-Velasco, Henrik Roedjegard, and Gert I. Andersson "Double-sided bulk micromachining of SOI films using room-temperature oxygen-plasma-assisted bonding", Proc. SPIE 4755, Design, Test, Integration, and Packaging of MEMS/MOEMS 2002, (19 April 2002); https://doi.org/10.1117/12.462867

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