19 April 2002 Low-loss microstrip MEMS technology for passive components design in the Ka-band
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Proceedings Volume 4755, Design, Test, Integration, and Packaging of MEMS/MOEMS 2002; (2002) https://doi.org/10.1117/12.462797
Event: Symposium on Design, Test, Integration, and Packaging of MEMS/MOEMS 2002, 2002, Cannes-Mandelieu, France
Abstract
The development of Wireless Local Loop applications require low-cost technologies in the Ka-band. As transmission lines and passive circuit components on standard low-resistivity silicon substrates have high loss in this frequency range, a new microstrip MEMS technology is proposed for high- frequency applications. It has many advantages as the low cost of the substrates (glass and standard silicon), the simple technological process, the good electrical performances, and the low sensitivity to electromagnetic radiation. This technology consists in inverted microstrip lines, either on low loss silicon or on glass, which can be combined to obtain compact circuits associating active and passive components. Moreover, this technology seems suitable for current microwave and radiofrequency applications because it could be easily adapted to silicon fabrication technologies dedicated to planar circuits.
© (2002) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
L. Martoglio, L. Martoglio, E. Richalot, E. Richalot, O. Picon, O. Picon, } "Low-loss microstrip MEMS technology for passive components design in the Ka-band", Proc. SPIE 4755, Design, Test, Integration, and Packaging of MEMS/MOEMS 2002, (19 April 2002); doi: 10.1117/12.462797; https://doi.org/10.1117/12.462797
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