19 April 2002 Optical interferometry investigation of internal stress and optomechanical characteristics of silicon-oxynitride thin films fabricated by PECVD
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Proceedings Volume 4755, Design, Test, Integration, and Packaging of MEMS/MOEMS 2002; (2002) https://doi.org/10.1117/12.462881
Event: Symposium on Design, Test, Integration, and Packaging of MEMS/MOEMS 2002, 2002, Cannes-Mandelieu, France
Abstract
The full-field interferometry is very well suited for evaluation of micromechanical and material properties of microsystems. In this paper, we presented a Twyman-Green interferometer for MEMS/MOEMS testing. The measurements of out-of-plan displacements of special silicon membranes with thin film of SiOxNy deposited by PECVD enable the analysis of opto=mechanical properties.
© (2002) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Michal Jozwik, Andrei Sabac, Christophe Gorecki, "Optical interferometry investigation of internal stress and optomechanical characteristics of silicon-oxynitride thin films fabricated by PECVD", Proc. SPIE 4755, Design, Test, Integration, and Packaging of MEMS/MOEMS 2002, (19 April 2002); doi: 10.1117/12.462881; https://doi.org/10.1117/12.462881
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