19 April 2002 Reduction of spurious resonance in rf package using silicon micromachining
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Proceedings Volume 4755, Design, Test, Integration, and Packaging of MEMS/MOEMS 2002; (2002) https://doi.org/10.1117/12.462872
Event: Symposium on Design, Test, Integration, and Packaging of MEMS/MOEMS 2002, 2002, Cannes-Mandelieu, France
Abstract
A low-loss RF package has been realized using silicon- micromachining technique. As the frequency of the device increases, the loss caused by packaging increases. Therefore, low loss high frequency packaging is needed. For frequency above 10GHz, a metal package is used but a metal package has spurious resonance caused by interaction between radiation of RF circuits and cavity geometry. To suppress spurious resonance, microwave absorbers are deposited inside the metal package; it is very hard to process with these materials in microscale. In this work, high resistivity silicon is simulated as a high frequency packaging material, and is realized using silicon deep etching process. And metal-filled thorough-hole via is formed to provide surface mount type interconnection using sandblast and copper electroplating process. The silicon package has reflection loss of 15dB, insertion loss of 0.7db from 500MHz up to 40GHz region.
© (2002) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Wonseo Choi, Joonyeop Lee, Seongsu Moon, Seonho Seok, KukJin Chun, "Reduction of spurious resonance in rf package using silicon micromachining", Proc. SPIE 4755, Design, Test, Integration, and Packaging of MEMS/MOEMS 2002, (19 April 2002); doi: 10.1117/12.462872; https://doi.org/10.1117/12.462872
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