13 September 2002 Applications of high-power laser technology to wide-bandgap nitride semiconductor processing
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Proceedings Volume 4760, High-Power Laser Ablation IV; (2002) https://doi.org/10.1117/12.482082
Event: International Symposium on High-Power Laser Ablation 2002, 2002, Taos, New Mexico, United States
Abstract
Laser annealing, laser surface processing and laser lift-off procedure are reviewed as applied to semiconductor nitride- based structures (GaN films and InGaN/GaN optoelectronic device structures grown on sapphire substrates). Data on laser ablation of composite GaN/sapphire material are reviewed with more detailed consideration of the ablation rate under subpicosecond laser pulses and under long-pulse irradiation in the IR range (wavelengths of 5.0-5.8 and 9.6 micrometers ).
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Petr Georgievich Eliseev, Andrei A. Ionin, Yurii M. Klimachev, Dmitrii V. Sinitsyn, Jinhyun Lee, Marek Osinski, "Applications of high-power laser technology to wide-bandgap nitride semiconductor processing", Proc. SPIE 4760, High-Power Laser Ablation IV, (13 September 2002); doi: 10.1117/12.482082; https://doi.org/10.1117/12.482082
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