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13 September 2002 Applications of high-power laser technology to wide-bandgap nitride semiconductor processing
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Proceedings Volume 4760, High-Power Laser Ablation IV; (2002)
Event: International Symposium on High-Power Laser Ablation 2002, 2002, Taos, New Mexico, United States
Laser annealing, laser surface processing and laser lift-off procedure are reviewed as applied to semiconductor nitride- based structures (GaN films and InGaN/GaN optoelectronic device structures grown on sapphire substrates). Data on laser ablation of composite GaN/sapphire material are reviewed with more detailed consideration of the ablation rate under subpicosecond laser pulses and under long-pulse irradiation in the IR range (wavelengths of 5.0-5.8 and 9.6 micrometers ).
© (2002) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Petr Georgievich Eliseev, Andrei A. Ionin, Yurii M. Klimachev, Dmitrii V. Sinitsyn, Jinhyun Lee, and Marek Osinski "Applications of high-power laser technology to wide-bandgap nitride semiconductor processing", Proc. SPIE 4760, High-Power Laser Ablation IV, (13 September 2002);

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