Analytical models of CMOS APS

Victor A. Shilin; Pavel A. Skrylev; A. L. Stempkovsky

doi:10.1117/12.463473

30 April 2002 Analytical models of CMOS APS

Victor A. Shilin, Pavel A. Skrylev, A. L. Stempkovsky

Proceedings Volume 4761, Second Conference on Photonics for Transportation; (2002) https://doi.org/10.1117/12.463473
Event: Second Conference on Photonics for Transportation, 2001, Sochy, Russian Federation

Abstract

The comparison of the CMOS APS and CCD device features has been made. It is expedient to develop high resolution and wide dynamic range systems with the PhCCD and simple systems with CMOS APS, which allows developing camera-on-a-chip. Schematic and layout types of CMOS APS pixel: with 3, 4 transistors per pixel, and with 5 transistors per two pixels have been considered. Pixel mathematical models, which binds photoelectric characteristics and design parameters. Dependencies of main features: reset time, read-out time, output signal amplitude, signal-to-noise ratio, modulation transfer function (MFT), which allows correctly designing the CMOS APS for any purpose applications, have been calculated.

Citation Download Citation

Victor A. Shilin, Pavel A. Skrylev, and A. L. Stempkovsky "Analytical models of CMOS APS", Proc. SPIE 4761, Second Conference on Photonics for Transportation, (30 April 2002); https://doi.org/10.1117/12.463473

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