9 August 2002 Influence of substrate temperature on the achievement of Ti-Ni-Zr quasi-crystalline films grown by pulsed laser deposition
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Proceedings Volume 4762, ALT'01 International Conference on Advanced Laser Technologies; (2002) https://doi.org/10.1117/12.478621
Event: International Conference on: Advanced Laser Technologies (ALT'01), 2001, Constanta, Romania
Abstract
Pulsed laser deposition has been used to prepare films in the Ti- Ni-Zr system. Morphology and structure of the obtained films have been studied as a function of substrate temperature being in the range 25 - 350 degree(s)C. Morphological and structural modifications have been followed by grazing incidence and (theta) -2(theta) X-ray diffraction, transmission, electron diffraction and imaging. Chemical composition has been analysed by electron probe micro- analysis. The in-depth variation of composition has been studied by secondary neutral mass spectroscopy. This study leads to the determination of the best growth temperature giving rise to the known quasicrystalline phase recently discovered in the Ti-Ni-Zr ternary system.
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V. Brien, V. Brien, A. Dauscher, A. Dauscher, P. Weisbecker, P. Weisbecker, F. Machizaud, F. Machizaud, } "Influence of substrate temperature on the achievement of Ti-Ni-Zr quasi-crystalline films grown by pulsed laser deposition", Proc. SPIE 4762, ALT'01 International Conference on Advanced Laser Technologies, (9 August 2002); doi: 10.1117/12.478621; https://doi.org/10.1117/12.478621
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