9 August 2002 Laser-induced explosive boiling during nanosecond laser ablation of silicon
Author Affiliations +
Proceedings Volume 4762, ALT'01 International Conference on Advanced Laser Technologies; (2002); doi: 10.1117/12.478637
Event: International Conference on: Advanced Laser Technologies (ALT'01), 2001, Constanta, Romania
The surface morphology of single crystal (100) Si wafers irradiated by 266 nm and 1064 nm laser pulses emitted by a solid state Nd:YAG laser has been investigated. The morphology of the bottom of craters remained flat and almost featureless after 266 nm single or multipulse laser irradiation up to the maximum fluence of 18 J/cm2 used in this study. The rims of the craters showed signs of radial liquid flow but it was apparent that the vaporization process was confined to the surface region. A different morphology was observed on the bottom of the craters formed by the 1064 nm wavelength laser pulses. Because this wavelength is absorbed in volume, (alpha) <104cm-1, a rather thick liquid Si pool formed at the surface. For laser fluences higher than 3-5 J/cm2 evidence of boiling sites were observed on the bottom of the crater, especially for multipulse irradiation. An evolution of surface morphology, from waves towards deep cavity was observed with the increase of pulse number. By analyzing the cavity formation mechanisms, their density and shape, we suggest that they were induced by heterogeneous boiling and not homogeneous boiling.
© (2002) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Valentin Craciun, Nabil D. Bassim, Doina Craciun, Chantal Boulmer-Leborgne, Joerg Hermann, Rajiv K. Singh, "Laser-induced explosive boiling during nanosecond laser ablation of silicon", Proc. SPIE 4762, ALT'01 International Conference on Advanced Laser Technologies, (9 August 2002); doi: 10.1117/12.478637; https://doi.org/10.1117/12.478637



Scanning electron microscopy


Laser ablation

Laser irradiation

Laser applications

Back to Top