9 August 2002 Laser spectroscopy of semiconductor quantum wires
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Proceedings Volume 4762, ALT'01 International Conference on Advanced Laser Technologies; (2002); doi: 10.1117/12.478648
Event: International Conference on: Advanced Laser Technologies (ALT'01), 2001, Constanta, Romania
Abstract
Different laser spectroscopy methods have been utilized to investigate the optical and nonlinear optical properties of semiconductor (GaAs and CdSe) quantum wires with dielectric barriers and porous Si and InP. The results of the measurements have allowed to conclude that exciton transitions dominate in the absorption and luminescence spectra. The binding energy of excitons in these semiconductor-dielectric quantum wires exceeds 100 meE. The dielectric enhancement of the binding energy and oscillator strength of excitons may be explained by the increasing of electron-hole attraction due to the large difference of the semiconductor and dielectric permittivites.
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V. S. Dneprovskii, E. A. Zhukov, K. Chernoutsan, O. Shaligina, "Laser spectroscopy of semiconductor quantum wires", Proc. SPIE 4762, ALT'01 International Conference on Advanced Laser Technologies, (9 August 2002); doi: 10.1117/12.478648; https://doi.org/10.1117/12.478648
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KEYWORDS
Semiconductors

Excitons

Dielectrics

Absorption

Luminescence

Nanostructures

Silicon

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